This device contains four independent gates, each of which performs the logic NAND function.
|
|
*Guaranteed 4000V minimum ESD protection
|
Storage Temperature .........................................................................................-65 to +150
Ambient Temperature under Bias .......................................................................-55 to +125
Junction Temperature under Bias .......................................................................-55 to +175
Plastic ..............................................................................................................-55 to +150
VCC Pin Potential to
Ground Pin ........................................................................................................-0.5V to +7.0V
Input Voltage (Note 2) .........................................................................................-0.5V to +7.0V
Input Current (Note 2) ...................................................................................-30 mA to +5.0 mA
Voltage Applied to Output
in HIGH State (with VCC e 0V)
Standard Output ..................................................................................................-0.5V to VCC
TRI-STATE® Output ...........................................................................................-0.5V to +5.5V
Current Applied to Output
in LOW State (Max) ..............................................................................twice the rated IOL (mA)
ESD Last Passing Voltage (Min) ...........................................................................................4000V
Post a Buying Lead
Required Field 
